january 2001 ? 2001 fairchild semiconductor corp. FDD6680A/fdu6680a rev c(w) FDD6680A/fdu6680a 30v n-channel powertrench ? ? ? ? mosfet general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds( on) , fast switching speed and extremely low r ds(on) in a small package. applications ? dc/dc converter ? motor drives features ? 56 a, 30 v r ds(on) = 9.5 m ? @ v gs = 10 v r ds(on) = 13 m ? @ v gs = 4.5 v ? low gate charge (23nc typ.) ? fast switching ? high performance trench technology for extremely low r ds(on) g s d to-252 d-pak (to-252) g ds i-pak (to-251aa) s g d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d continuous drain current @t c =25c (note 3) 56 a @t a =25c (note 1a) 14 pulsed (note 1a) 100 power dissipation @t c =25c (note 3) 60 @t a =25c (note 1a) 2.8 p d @t a =25c (note 1b) 1.3 w t j , t stg operating and storage junction temperature range -55 to +175 c thermal characteristics r jc thermal resistance, junction-to-case (note 1) 2.1 c/w r ja thermal resistance, junction-to-ambient (note 1a) 45 c/w r ja thermal resistance, junction-to-ambient (note 1b) 96 c/w package marking and ordering information device marking device package reel size tape width quantity FDD6680A FDD6680A d-pak (to-252) 13?? 12mm 2500 units fdu6680a fdu6680a i-pak (to-251) tube n/a 75 FDD6680A/fdu6680a
FDD6680A/fdu6680a rev. c(w) d r p ds(on) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 2) e as drain-source avalanche energy single pulse, v dd = 15 v, i d =14a 200 mj i as drain-source avalanche current 56 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a,referenced to 25 c 23 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gssf gate?body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?20 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.5 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a,referenced to 25 c -4 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 14 a v gs = 4.5 v, i d = 12 a v gs = 10 v, i d = 14 a,t j =125 c 8 10 12 9.5 13 16 m ? i d(on) on?state drain current v gs = 10 v, v ds = 5 v 50 a g fs forward transconductance v ds = 5 v, i d = 9.5 a 41 s dynamic characteristics c iss input capacitance 2180 pf c oss output capacitance 500 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 255 pf switching characteristics (note 2) t d(on) turn?on delay time 13 24 ns t r turn?on rise time 14 26 ns t d(off) turn?off delay time 43 70 ns t f turn?off fall time v dd = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 15 27 ns q g total gate charge 23 33 nc q gs gate?source charge 7 nc q gd gate?drain charge v ds = 40v, i d = 9.5 a, v gs = 5 v 11 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 2.3 a v sd drain?source diode forward voltage v gs = 0 v, i s = 2.3 a (note 2) 0.72 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) r ja = 45c/w when mounted on a 1in 2 pad of 2 oz copper b) r ja = 96c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 3. maximum current is calculated as: where p d is maximum power dissipation at t c = 25c and r ds(on) is at t j(max) and v gs = 10v. package current limitation is 21a FDD6680A/fdu6680a
FDD6680A/fdu6680a rev. c(w) typical characteristics 0 10 20 30 40 50 0123 v ds , drain-source voltage (v) i d , drain-source current (a) v gs = 10v 3.0v 2.5v 4.5v 3.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 10203040 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.0v 10v 4.0v 3.5v 4.5v 6.0v figure 1. on-region characteristics figure 2. on-resistance variation with drain current and gate voltage 0.6 0.8 1 1.2 1.4 1.6 -50-250 255075100125150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 14a v gs = 10v 0 0.005 0.01 0.015 0.02 0.025 0.03 246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 7 a t a = 125 o c t a = 25 o c figure 3. on-resistance variation withtemperature figure 4. on-resistance variation with gate-to-source voltage 0 10 20 30 40 50 12345 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 00.20.40.60.811.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics figure 6. body diode forward voltage variation with source current and temperature FDD6680A/fdu6680a
FDD6680A/fdu6680a rev. c(w) typical characteristics 0 2 4 6 8 10 0 1020304050 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 14a v ds = 5v 10v 15v 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics figure 8. capacitance characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 100 s r ds(on) limit v gs = 10v single pulse r ja = 96 o c/w t a = 25 o c 10ms 1ms 0 50 100 150 200 0.001 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 96 c /w t a = 25c figure 9. maximum safe operating area figure 10. single pulse maximum power dissipation 0.0001 0.001 0.01 0.1 1 10 100 300 0.0001 0.001 0.01 0.1 1 t , time (sec) transient thermal resistance 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 r(t), normalized effective duty cycle, d = t / t 1 2 r (t) = r(t) * r r = 96c/w ja ja ja t - t = p * r (t) ja a j p(pk) t 1 t 2 figure 11. transient thermal response curve thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. FDD6680A/fdu6680a
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